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STD1NK60-1

STMicroelectronics
RoHS
RoHS RoHS compliant
Package TO-251-3 Short Leads, IPak, TO-251AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 600V 1A IPAK
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Buying Options
Total Price: USD $0.66
Unit Price: USD $0.66
≥1 USD $0.66
≥10 USD $0.527058
≥100 USD $0.417648
≥500 USD $0.353998
≥1000 USD $0.350134
Inventory: 1424
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No

Dimensions

Width 6.2mm
Length 6.6mm
Height 2.4mm

Technical

Avalanche Energy Rating (Eas) 25 mJ
Pulsed Drain Current-Max (IDM) 4A
Drain to Source Breakdown Voltage 600V
Drain Current-Max (Abs) (ID) 1A
Gate to Source Voltage (Vgs) 30V
Threshold Voltage 3V
Continuous Drain Current (ID) 1A
Turn-Off Delay Time 19 ns
Fall Time (Typ) 25 ns
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 5 ns
Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V
Current - Continuous Drain (Id) @ 25°C 1A Tc
Input Capacitance (Ciss) (Max) @ Vds 156pF @ 25V
Vgs(th) (Max) @ Id 3.7V @ 250μA
Rds On (Max) @ Id, Vgs 8.5 Ω @ 500mA, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 6.5 ns
Power Dissipation 30W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 30W Tc
Number of Elements 1
Pin Count 3
Base Part Number STD1NK
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
JESD-609 Code e3
Series SuperMESH?
Packaging Tube
Operating Temperature -55°C~150°C TJ

Physical

Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type Through Hole
Mount Surface Mount, Through Hole
Contact Plating Tin

Supply Chain

Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Factory Lead Time 12 Weeks

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