Avalanche Energy Rating (Eas) 200 mJ
Pulsed Drain Current-Max (IDM) 68A
Drain to Source Breakdown Voltage 30V
Drain-source On Resistance-Max 0.06Ohm
Gate to Source Voltage (Vgs) 16V
Continuous Drain Current (ID) 17A
Turn-Off Delay Time 25 ns
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Gate Charge (Qg) (Max) @ Vgs 6.5nC @ 5V
Current - Continuous Drain (Id) @ 25°C 17A Tc
Input Capacitance (Ciss) (Max) @ Vds 320pF @ 25V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Rds On (Max) @ Id, Vgs 50m Ω @ 8.5A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 30W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ