Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 70m Ω @ 8A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 370pF @ 25V
Current - Continuous Drain (Id) @ 25°C 24A Tc
Gate Charge (Qg) (Max) @ Vgs 7.5nC @ 5V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 24A
Gate to Source Voltage (Vgs) 18V
Drain to Source Breakdown Voltage 60V
Avalanche Energy Rating (Eas) 200 mJ
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 40W Tc
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature LOW THRESHOLD, LOGIC LEVEL COMPATIBLE
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ