STD12N65M5
RoHS 
RoHS compliant
RoHS compliantPackage TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 650V 8.5A DPAK
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Buying Options
Total Price: USD $2.82
Unit Price: USD $2.82435
≥1 USD $2.82435
≥10 USD $2.318
≥100 USD $2.24485
≥500 USD $2.17265
≥1000 USD $2.10045
Inventory: 17157
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No
Dimensions
Width 6.2mm
Length 6.6mm
Height 2.4mm
Technical
Drain to Source Breakdown Voltage 650V
Gate to Source Voltage (Vgs) 25V
Threshold Voltage 4V
Continuous Drain Current (ID) 8.5A
Turn-Off Delay Time 15.6 ns
Fall Time (Typ) 24 ns
Vgs (Max) ±25V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 9.5ns
Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V
Current - Continuous Drain (Id) @ 25°C 8.5A Tc
Input Capacitance (Ciss) (Max) @ Vds 900pF @ 100V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 430m Ω @ 4.3A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 22.6 ns
Case Connection DRAIN
Power Dissipation 70W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 70W Tc
Number of Elements 1
JESD-30 Code R-PSSO-G2
Pin Count 3
Base Part Number STD12
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Terminal Form GULL WING
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Matte Tin (Sn) - annealed
Resistance 430mOhm
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Series MDmesh? V
Packaging Cut Tape (CT)
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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