STD12N65M2
RoHS 
RoHS compliant
RoHS compliantPackage TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 650V 8A DPAK
PDF
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Buying Options
Total Price: USD $1.43
Unit Price: USD $1.4344
≥1 USD $1.4344
≥10 USD $1.17656
≥100 USD $0.91476
≥500 USD $0.775368
≥1000 USD $0.63162
Inventory: 1169
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 16 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Technical
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Series MDmesh? M2
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STD12
Power Dissipation-Max 85W Tc
Element Configuration Single
Turn On Delay Time 9 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 500m Ω @ 4A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 535pF @ 100V
Current - Continuous Drain (Id) @ 25°C 8A Tc
Gate Charge (Qg) (Max) @ Vgs 16.5nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Turn-Off Delay Time 34 ns
Continuous Drain Current (ID) 8A
Gate to Source Voltage (Vgs) 25V
Drain Current-Max (Abs) (ID) 8A
Dimensions
Height 2.4mm
Length 6.6mm
Width 6.2mm
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
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