STD12N60M2
RoHS 
RoHS compliant
RoHS compliantPackage TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-channel 600 V, 0.395 Ohm typ., 9 A MDmesh M2 Power MOSFET in DPAK package
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Buying Options
Total Price: USD $1.41
Unit Price: USD $1.408
≥1 USD $1.408
≥10 USD $1.1484
≥100 USD $0.893288
≥500 USD $0.757152
≥1000 USD $0.616792
Inventory: 1138
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Avalanche Energy Rating (Eas) 117 mJ
DS Breakdown Voltage-Min 600V
Pulsed Drain Current-Max (IDM) 36A
Drain-source On Resistance-Max 0.45Ohm
Drain Current-Max (Abs) (ID) 9A
Vgs (Max) ±25V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 600V
Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V
Current - Continuous Drain (Id) @ 25°C 9A Tc
Input Capacitance (Ciss) (Max) @ Vds 538pF @ 100V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 450m Ω @ 4.5A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 85W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
JESD-30 Code R-PSSO-G2
Base Part Number STD12
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Series MDmesh? M2
Packaging Cut Tape (CT)
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Surface Mount YES
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type Surface Mount
Supply Chain
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Factory Lead Time 16 Weeks
Alternative Model
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