STB9NK70Z-1
RoHS 
RoHS compliant
RoHS compliantPackage TO-262-3 Long Leads, I2Pak, TO-262AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
STMICROELECTRONICS STB9NK70Z-1 Power MOSFET, N Channel, 7.5 A, 700 V, 1 ohm, 10 V, 3.75 V
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Buying Options
Total Price: USD $1.79
Unit Price: USD $1.7917
≥1 USD $1.7917
≥10 USD $1.4706
≥100 USD $1.42405
≥500 USD $1.37845
≥1000 USD $1.33285
Inventory: 1208
Minimum: 1
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Technical Details
Technical
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Base Part Number STB9N
Pin Count 3
Number of Elements 1
Power Dissipation-Max 115W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 115W
Turn On Delay Time 22 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.2 Ω @ 4A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 1370pF @ 25V
Current - Continuous Drain (Id) @ 25°C 7.5A Tc
Gate Charge (Qg) (Max) @ Vgs 68nC @ 10V
Rise Time 17ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 45 ns
Continuous Drain Current (ID) 7.5A
Threshold Voltage 3.75V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 700V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Series SuperMESH?
Packaging Tube
Operating Temperature -55°C~150°C TJ
Dimensions
Height 10.75mm
Length 10.4mm
Width 4.6mm
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Mounting Type Through Hole
Mount Through Hole
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
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