STB80NF55L-08-1
RoHS 
RoHS compliant
RoHS compliantPackage TO-262-3 Long Leads, I2Pak, TO-262AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 55V 80A I2PAK
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Buying Options
Total Price: USD $2.6
Unit Price: USD $2.596
≥1 USD $2.596
≥10 USD $2.058672
≥100 USD $1.764664
≥500 USD $1.568547
≥1000 USD $1.343074
≥3000 USD $1.264648
Inventory: 1115
Minimum: 1
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Technical Details
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Technical
Avalanche Energy Rating (Eas) 870 mJ
Drain to Source Breakdown Voltage 55V
Gate to Source Voltage (Vgs) 16V
Continuous Drain Current (ID) 80A
Turn-Off Delay Time 85 ns
Fall Time (Typ) 65 ns
Vgs (Max) ±16V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Rise Time 145ns
Gate Charge (Qg) (Max) @ Vgs 100nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Input Capacitance (Ciss) (Max) @ Vds 4350pF @ 25V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Rds On (Max) @ Id, Vgs 8m Ω @ 40A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 35 ns
Power Dissipation 300W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 300W Tc
Number of Elements 1
Pin Count 3
Base Part Number STB80N
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature LOGIC LEVEL COMPATIBLE
Terminal Finish Matte Tin (Sn)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e3
Series STripFET? II
Packaging Tube
Operating Temperature 175°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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