STB80NF03L-04-1
RoHS 
RoHS compliant
RoHS compliantPackage TO-262-3 Long Leads, I2Pak, TO-262AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 80A I2PAK
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Buying Options
Total Price: USD $2.19
Unit Price: USD $2.18595
≥1 USD $2.18595
≥10 USD $1.7936
≥100 USD $1.73755
≥500 USD $1.6815
≥1000 USD $1.62545
Inventory: 1146
Minimum: 1
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -60°C~175°C TJ
Packaging Tube
Series STripFET? II
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Base Part Number STB80N
Pin Count 3
Number of Elements 1
Power Dissipation-Max 300W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Case Connection DRAIN
Turn On Delay Time 30 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4m Ω @ 40A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5500pF @ 25V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Gate Charge (Qg) (Max) @ Vgs 110nC @ 4.5V
Rise Time 270ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 95 ns
Turn-Off Delay Time 110 ns
Continuous Drain Current (ID) 80A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0055Ohm
Drain to Source Breakdown Voltage 30V
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Alternative Model
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