Avalanche Energy Rating (Eas) 120 mJ
DS Breakdown Voltage-Min 100V
Pulsed Drain Current-Max (IDM) 260A
Drain-source On Resistance-Max 0.0195Ohm
Continuous Drain Current (ID) 65A
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 100V
Gate Charge (Qg) (Max) @ Vgs 85nC @ 10V
Current - Continuous Drain (Id) @ 25°C 65A Tc
Input Capacitance (Ciss) (Max) @ Vds 5800pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 19.5m Ω @ 30A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 150W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) 30
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) 245
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Matte Tin (Sn) - annealed
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Series DeepGATE?, STripFET?
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ