STB6NK60Z-1
RoHS 
RoHS compliant
RoHS compliantPackage TO-262-3 Long Leads, I2Pak, TO-262AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 600V 6A I2PAK
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Buying Options
Total Price: USD $0.69
Unit Price: USD $0.68685
≥1 USD $0.68685
≥10 USD $0.56335
≥100 USD $0.54625
≥500 USD $0.5282
≥1000 USD $0.5111
Inventory: 1275
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No
Technical
Avalanche Energy Rating (Eas) 210 mJ
Pulsed Drain Current-Max (IDM) 24A
Drain to Source Breakdown Voltage 600V
Drain Current-Max (Abs) (ID) 6A
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 6A
Turn-Off Delay Time 47 ns
Fall Time (Typ) 19 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 14ns
Gate Charge (Qg) (Max) @ Vgs 46nC @ 10V
Current - Continuous Drain (Id) @ 25°C 6A Tc
Input Capacitance (Ciss) (Max) @ Vds 905pF @ 25V
Vgs(th) (Max) @ Id 4.5V @ 100μA
Rds On (Max) @ Id, Vgs 1.2 Ω @ 3A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 14 ns
Power Dissipation 110W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 110W Tc
Number of Elements 1
Pin Count 3
Base Part Number STB6N
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Tin (Sn)
Resistance 1.2Ohm
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Not For New Designs
JESD-609 Code e3
Series SuperMESH?
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
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