Max Junction Temperature (Tj) 150°C
Avalanche Energy Rating (Eas) 960 mJ
Drain to Source Breakdown Voltage 650V
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 42A
Turn-Off Delay Time 12 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 98nC @ 10V
Current - Continuous Drain (Id) @ 25°C 42A Tc
Input Capacitance (Ciss) (Max) @ Vds 4200pF @ 100V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 63m Ω @ 21A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 250W Tc
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 245
Terminal Form THROUGH-HOLE
Technology MOSFET (Metal Oxide)
Terminal Finish Matte Tin (Sn) - annealed
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ