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STB55NF03LT4

STMicroelectronics
RoHS
RoHS RoHS compliant
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-Ch 30 Volt 55 Amp
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Buying Options
Total Price: USD $0.4
Unit Price: USD $0.4028
≥1 USD $0.4028
≥10 USD $0.3306
≥100 USD $0.32015
≥500 USD $0.31065
≥1000 USD $0.3002
Inventory: 1150
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 12 Weeks
Lifecycle Status NRND (Last Updated: 7 months ago)

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature 175°C TJ
Packaging Tape & Reel (TR)
Series STripFET?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 245
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number STB55N
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 80W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 80W
Case Connection DRAIN
Turn On Delay Time 28 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 13m Ω @ 27.5A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1265pF @ 25V
Current - Continuous Drain (Id) @ 25°C 55A Tc
Gate Charge (Qg) (Max) @ Vgs 27nC @ 4.5V
Rise Time 400 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 50 ns
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) 55A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 16V
Drain-source On Resistance-Max 0.02Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 220A

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant

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