Drain to Source Breakdown Voltage 100V
Gate to Source Voltage (Vgs) 15V
Continuous Drain Current (ID) 40A
Turn-Off Delay Time 64 ns
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Gate Charge (Qg) (Max) @ Vgs 64nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 40A Tc
Input Capacitance (Ciss) (Max) @ Vds 2300pF @ 25V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Rds On (Max) @ Id, Vgs 33m Ω @ 20A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 150W Tc
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 245
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -65°C~175°C TJ