STB40N60M2
RoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET POWER MOSFET
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Buying Options
Total Price: USD $5.23
Unit Price: USD $5.2272
≥1 USD $5.2272
≥10 USD $4.3912
≥100 USD $3.552648
≥500 USD $3.157862
Inventory: 1255
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Technical
Avalanche Energy Rating (Eas) 500 mJ
DS Breakdown Voltage-Min 600V
Drain-source On Resistance-Max 0.088Ohm
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 34A
Turn-Off Delay Time 96 ns
Fall Time (Typ) 11 ns
Vgs (Max) ±25V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 600V
Rise Time 13.5 ns
Gate Charge (Qg) (Max) @ Vgs 57nC @ 10V
Current - Continuous Drain (Id) @ 25°C 34A Tc
Input Capacitance (Ciss) (Max) @ Vds 2500pF @ 100V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 88m Ω @ 17A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 20.5 ns
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 250W Tc
Number of Channels 1
Number of Elements 1
JESD-30 Code R-PSSO-G2
Base Part Number STB40N
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form GULL WING
Technology MOSFET (Metal Oxide)
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Series MDmesh? II Plus
Packaging Cut Tape (CT)
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Weight 3.949996g
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Mount Surface Mount
Contact Plating Tin
Supply Chain
Factory Lead Time 26 Weeks
Alternative Model
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