Drain to Source Breakdown Voltage 600V
Drain Current-Max (Abs) (ID) 25A
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 29A
Turn-Off Delay Time 106 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 83.6nC @ 10V
Current - Continuous Drain (Id) @ 25°C 29A Tc
Input Capacitance (Ciss) (Max) @ Vds 2722pF @ 100V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 105m Ω @ 14.5A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 210W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Peak Reflow Temperature (Cel) 245
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Matte Tin (Sn) - annealed
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Series Automotive, AEC-Q101, MDmesh? II
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ