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STB34NM60ND

STMicroelectronics
RoHS
RoHS RoHS compliant
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 600V 29A D2PAK
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Buying Options
Total Price: USD $9.61
Unit Price: USD $9.6096
≥1 USD $9.6096
≥10 USD $8.24032
≥100 USD $6.866992
≥500 USD $6.059134
Inventory: 1003
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No

Dimensions

Width 10.4mm
Length 10.75mm
Height 4.6mm

Technical

Drain to Source Breakdown Voltage 650V
Gate to Source Voltage (Vgs) 25V
Threshold Voltage 4V
Continuous Drain Current (ID) 29A
Turn-Off Delay Time 111 ns
Fall Time (Typ) 61.8 ns
Vgs (Max) ±25V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 600V
Rise Time 53.4 ns
Gate Charge (Qg) (Max) @ Vgs 80.4nC @ 10V
Current - Continuous Drain (Id) @ 25°C 29A Tc
Input Capacitance (Ciss) (Max) @ Vds 2785pF @ 50V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 110m Ω @ 14.5A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 30 ns
Case Connection DRAIN
Power Dissipation 190W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 190W Tc
Number of Elements 1
JESD-30 Code R-PSSO-G2
Pin Count 4
Base Part Number STB34N
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 245
Terminal Form GULL WING
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature ULTRA-LOW RESISTANCE
Terminal Finish Matte Tin (Sn) - annealed
Resistance 110MOhm
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
JESD-609 Code e3
Series FDmesh? II
Packaging Cut Tape (CT)
Operating Temperature 150°C TJ

Physical

Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Mount Surface Mount

Supply Chain

Factory Lead Time 26 Weeks

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