STB30NM50N
RoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 500V 27A D2PAK
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Buying Options
Total Price: USD $6.19
Unit Price: USD $6.19018
≥1 USD $6.19018
≥10 USD $5.839799
≥100 USD $5.509243
≥500 USD $5.197396
≥1000 USD $4.90321
Inventory: 7722
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Avalanche Energy Rating (Eas) 900 mJ
Drain to Source Breakdown Voltage 500V
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 27A
Turn-Off Delay Time 115 ns
Fall Time (Typ) 60 ns
Vgs (Max) ±25V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 20ns
Gate Charge (Qg) (Max) @ Vgs 94nC @ 10V
Current - Continuous Drain (Id) @ 25°C 27A Tc
Input Capacitance (Ciss) (Max) @ Vds 2740pF @ 50V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 115m Ω @ 13.5A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection ISOLATED
Power Dissipation 190W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 190W Tc
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSSO-G2
Pin Count 4
Base Part Number STB30N
Time@Peak Reflow Temperature-Max (s) 30
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) 245
Terminal Form GULL WING
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Matte Tin (Sn) - annealed
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e3
Series MDmesh? II
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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