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STB28N65M2

STMicroelectronics
RoHS
RoHS RoHS compliant
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 650V 20A D2PAK
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Buying Options
Total Price: USD $3.13
Unit Price: USD $3.1328
≥1 USD $3.1328
≥10 USD $2.63208
≥100 USD $2.129424
≥500 USD $1.892792
Inventory: 1400
Minimum: 1
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Technical Details

Compliance

RoHS Status ROHS3 Compliant

Dimensions

Width 9.35mm
Length 10.4mm
Height 4.6mm

Technical

Avalanche Energy Rating (Eas) 760 mJ
DS Breakdown Voltage-Min 650V
Pulsed Drain Current-Max (IDM) 80A
Drain-source On Resistance-Max 0.18Ohm
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 20A
Turn-Off Delay Time 59 ns
Vgs (Max) ±25V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 650V
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Current - Continuous Drain (Id) @ 25°C 20A Tc
Input Capacitance (Ciss) (Max) @ Vds 1440pF @ 100V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 180m Ω @ 10A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 13.4 ns
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 170W Tc
Number of Elements 1
JESD-30 Code R-PSSO-G2
Base Part Number STB28N
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form GULL WING
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
HTS Code 8541.29.00.95
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Series MDmesh? M2
Packaging Cut Tape (CT)
Operating Temperature 150°C TJ

Physical

Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Mount Surface Mount

Supply Chain

Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Factory Lead Time 26 Weeks

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