STB28N60M2
RoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET POWER MOSFET
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Buying Options
Total Price: USD $2.51
Unit Price: USD $2.508
≥1 USD $2.508
≥10 USD $2.10584
≥100 USD $1.703504
≥500 USD $1.514234
Inventory: 962
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 26 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Physical
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Weight 3.949996g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Series MDmesh? II Plus
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Base Part Number STB28N
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 170W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 14.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 150m Ω @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1440pF @ 100V
Current - Continuous Drain (Id) @ 25°C 22A Tc
Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V
Rise Time 7.2ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 8 ns
Turn-Off Delay Time 100 ns
Continuous Drain Current (ID) 22A
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 88A
Avalanche Energy Rating (Eas) 350 mJ
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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