STB26NM60ND
RoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET N-CH 600V 22A 3-Pin(2+Tab) D2PAK T/R
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Buying Options
Total Price: USD $27.65
Unit Price: USD $27.64975
≥1 USD $27.64975
≥10 USD $22.68695
≥100 USD $21.97825
≥500 USD $21.2686
≥1000 USD $20.5599
Inventory: 991
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No
Dimensions
Width 9.35mm
Length 10.4mm
Height 4.6mm
Technical
DS Breakdown Voltage-Min 600V
Pulsed Drain Current-Max (IDM) 84A
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 21A
Turn-Off Delay Time 69 ns
Fall Time (Typ) 27.5 ns
Vgs (Max) ±25V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 600V
Rise Time 14.5ns
Gate Charge (Qg) (Max) @ Vgs 54.6nC @ 10V
Current - Continuous Drain (Id) @ 25°C 21A Tc
Input Capacitance (Ciss) (Max) @ Vds 1817pF @ 100V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 175m Ω @ 10.5A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 22 ns
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 190W Tc
Number of Channels 1
Number of Elements 1
JESD-30 Code R-PSSO-G2
Base Part Number STB26N
Terminal Form GULL WING
Technology MOSFET (Metal Oxide)
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series FDmesh? II
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Weight 3.949996g
Number of Pins 3
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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