STB25NM60N-1
RoHS 
RoHS compliant
RoHS compliantPackage TO-262-3 Long Leads, I2Pak, TO-262AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 600V 21A I2PAK
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Buying Options
Total Price: USD $1.32
Unit Price: USD $1.3167
≥1 USD $1.3167
≥10 USD $1.08015
≥100 USD $1.0469
≥500 USD $1.0127
≥1000 USD $0.97945
Inventory: 1271
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Technical
Avalanche Energy Rating (Eas) 850 mJ
Pulsed Drain Current-Max (IDM) 84A
Drain to Source Breakdown Voltage 600V
Drain-source On Resistance-Max 0.16Ohm
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 21A
Turn-Off Delay Time 94 ns
Fall Time (Typ) 24 ns
Vgs (Max) ±25V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 18ns
Gate Charge (Qg) (Max) @ Vgs 84nC @ 10V
Current - Continuous Drain (Id) @ 25°C 21A Tc
Input Capacitance (Ciss) (Max) @ Vds 2400pF @ 50V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 160m Ω @ 10.5A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Power Dissipation 160W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 160W Tc
Number of Elements 1
Qualification Status Not Qualified
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Current Rating 20A
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 600V
Terminal Finish Tin (Sn)
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e3
Series MDmesh? II
Packaging Tube
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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