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STB22NS25ZT4

STMicroelectronics
RoHS
RoHS RoHS compliant
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-Ch 250 Volt 22 Amp
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Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series MESH OVERLAY?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Subcategory FET General Purpose Power
Voltage - Rated DC 250V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 245
Reach Compliance Code not_compliant
Current Rating 22A
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number STB22N
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 135W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 135W
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 150m Ω @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 22A Tc
Gate Charge (Qg) (Max) @ Vgs 151nC @ 10V
Rise Time 30ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 78 ns
Continuous Drain Current (ID) 11A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.15Ohm
Drain to Source Breakdown Voltage 250V
Pulsed Drain Current-Max (IDM) 88A

Compliance

REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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