Pulsed Drain Current-Max (IDM) 64A
Drain to Source Breakdown Voltage 600V
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 16A
Turn-Off Delay Time 74 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 44nC @ 10V
Current - Continuous Drain (Id) @ 25°C 16A Tc
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 50V
Vgs(th) (Max) @ Id 4V @ 100μA
Rds On (Max) @ Id, Vgs 220m Ω @ 8A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 125W Tc
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 245
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Terminal Finish Matte Tin (Sn) - annealed
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ