STB21NM60N-1
RoHS 
RoHS compliant
RoHS compliantPackage TO-262-3 Long Leads, I2Pak, TO-262AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 600V 17A I2PAK
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Buying Options
Total Price: USD $1.43
Unit Price: USD $1.42975
≥1 USD $1.42975
≥10 USD $1.17325
≥100 USD $1.1362
≥500 USD $1.1001
≥1000 USD $1.06305
Inventory: 3963
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Technical
Avalanche Energy Rating (Eas) 610 mJ
Pulsed Drain Current-Max (IDM) 68A
Drain to Source Breakdown Voltage 600V
Drain-source On Resistance-Max 0.22Ohm
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 17A
Turn-Off Delay Time 84 ns
Fall Time (Typ) 31 ns
Vgs (Max) ±25V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 15ns
Gate Charge (Qg) (Max) @ Vgs 66nC @ 10V
Current - Continuous Drain (Id) @ 25°C 17A Tc
Input Capacitance (Ciss) (Max) @ Vds 1900pF @ 50V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 220m Ω @ 8.5A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Power Dissipation 140W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 140W Tc
Number of Elements 1
Qualification Status Not Qualified
Pin Count 3
Base Part Number STB21N
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Current Rating 17A
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 600V
Subcategory FET General Purpose Power
Terminal Finish TIN
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e3
Series MDmesh?
Packaging Tube
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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