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STB21NM50N

STMicroelectronics
RoHS
RoHS RoHS compliant
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 500V 18A D2PAK
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Buying Options
Total Price: USD $4.19
Unit Price: USD $4.1895
≥1 USD $4.1895
≥10 USD $3.43805
≥100 USD $3.3307
≥500 USD $3.22335
≥1000 USD $3.116
Inventory: 65006
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC

Technical

Nominal Vgs 3 V
Avalanche Energy Rating (Eas) 480 mJ
Dual Supply Voltage 500V
Pulsed Drain Current-Max (IDM) 72A
Drain to Source Breakdown Voltage 500V
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 18A
Turn-Off Delay Time 90 ns
Fall Time (Typ) 30 ns
Vgs (Max) ±25V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 18ns
Gate Charge (Qg) (Max) @ Vgs 65nC @ 10V
Current - Continuous Drain (Id) @ 25°C 18A Tc
Input Capacitance (Ciss) (Max) @ Vds 1950pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 190m Ω @ 9A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Power Dissipation 140W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 140W Tc
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSSO-G2
Pin Count 3
Base Part Number STB21N
Time@Peak Reflow Temperature-Max (s) 30
Current Rating 18A
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) 245
Terminal Form GULL WING
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 500V
Subcategory FET General Purpose Power
Terminal Finish Matte Tin (Sn)
Resistance 190mOhm
ECCN Code EAR99
Termination SMD/SMT
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e3
Series MDmesh? II
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ

Physical

Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Mount Surface Mount

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