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STB20NM60D

STMicroelectronics
RoHS
RoHS RoHS compliant
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 600V 20A D2PAK
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Buying Options
Total Price: USD $13.83
Unit Price: USD $13.82535
≥1 USD $13.82535
≥10 USD $11.34395
≥100 USD $10.9896
≥500 USD $10.6343
≥1000 USD $10.27995
Inventory: 1643
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 26 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
Series FDmesh?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 290mOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Avalanche Energy Rating (Eas) 700 mJ
Pulsed Drain Current-Max (IDM) 80A
Drain to Source Breakdown Voltage 600V
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 20A
Fall Time (Typ) 22 ns
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 12 ns
Gate Charge (Qg) (Max) @ Vgs 52nC @ 10V
Current - Continuous Drain (Id) @ 25°C 20A Tc
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 25V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 290m Ω @ 10A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 25 ns
Power Dissipation 192W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 192W Tc
Number of Elements 1
JESD-30 Code R-PSSO-G2
Pin Count 3
Base Part Number STB20N
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 245

Compliance

Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No

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