STB20N65M5
RoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 650V 18A D2PAK
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Buying Options
Total Price: USD $2.93
Unit Price: USD $2.9304
≥1 USD $2.9304
≥10 USD $2.45784
≥100 USD $1.988096
≥500 USD $1.767216
Inventory: 862
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No
Technical
Avalanche Energy Rating (Eas) 270 mJ
Pulsed Drain Current-Max (IDM) 72A
Drain to Source Breakdown Voltage 710V
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 18A
Fall Time (Typ) 7.5 ns
Vgs (Max) ±25V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 650V
Rise Time 7.5ns
Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V
Current - Continuous Drain (Id) @ 25°C 18A Tc
Input Capacitance (Ciss) (Max) @ Vds 1434pF @ 100V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 190m Ω @ 9A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 130W Tc
Number of Elements 1
JESD-30 Code R-PSSO-G2
Base Part Number STB20N
Terminal Form GULL WING
Technology MOSFET (Metal Oxide)
Resistance 190MOhm
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Series MDmesh? V
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Mount Surface Mount
Supply Chain
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Factory Lead Time 17 Weeks
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