STB200NF04L-1
RoHS 
RoHS compliant
RoHS compliantPackage TO-262-3 Long Leads, I2Pak, TO-262AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 40V 120A I2PAK
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Buying Options
Total Price: USD $3.4
Unit Price: USD $3.39625
≥1 USD $3.39625
≥10 USD $2.7873
≥100 USD $2.6999
≥500 USD $2.6125
≥1000 USD $2.52605
Inventory: 1409
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Radiation Hardening No
Technical
Avalanche Energy Rating (Eas) 1400 mJ
Pulsed Drain Current-Max (IDM) 480A
Drain to Source Breakdown Voltage 40V
Gate to Source Voltage (Vgs) 16V
Continuous Drain Current (ID) 120A
Turn-Off Delay Time 90 ns
Fall Time (Typ) 80 ns
Vgs (Max) ±16V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Rise Time 270ns
Gate Charge (Qg) (Max) @ Vgs 90nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Input Capacitance (Ciss) (Max) @ Vds 6400pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 3.8m Ω @ 50A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 37 ns
Power Dissipation 300W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 300W Tc
Number of Elements 1
Pin Count 3
Base Part Number STB200N
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Tin/Lead (Sn/Pb)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code no
JESD-609 Code e0
Series STripFET? II
Packaging Tube
Operating Temperature -55°C~175°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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