STB200NF04-1
RoHS 
RoHS compliant
RoHS compliantPackage TO-262-3 Long Leads, I2Pak, TO-262AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 40V 120A I2PAK
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Buying Options
Total Price: USD $0.47
Unit Price: USD $0.4712
≥1 USD $0.4712
≥10 USD $0.38665
≥100 USD $0.3743
≥500 USD $0.36195
≥1000 USD $0.35055
Inventory: 1296
Minimum: 1
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Technical Details
Technical
Continuous Drain Current (ID) 120A
Drain-source On Resistance-Max 0.0037Ohm
Pulsed Drain Current-Max (IDM) 480A
Avalanche Energy Rating (Eas) 1300 mJ
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 320ns
Gate Charge (Qg) (Max) @ Vgs 210nC @ 10V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Input Capacitance (Ciss) (Max) @ Vds 5100pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 3.7m Ω @ 90A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 310W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSIP-T3
Pin Count 3
Base Part Number STB200N
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Current Rating 120A
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 40V
Subcategory FET General Purpose Power
Terminal Finish Tin (Sn)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e3
Series STripFET? II
Packaging Tube
Operating Temperature -55°C~175°C TJ
Compliance
RoHS Status ROHS3 Compliant
Physical
Transistor Element Material SILICON
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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