STB19NM65N
RoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-Channel 650V 0.25 Ohms 15.5A
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Buying Options
Total Price: USD $5.18
Unit Price: USD $5.1832
≥1 USD $5.1832
≥10 USD $4.35072
≥100 USD $3.519648
≥500 USD $3.128576
Inventory: 804
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Radiation Hardening No
Technical
Avalanche Energy Rating (Eas) 400 mJ
Pulsed Drain Current-Max (IDM) 62A
Drain to Source Breakdown Voltage 650V
Drain-source On Resistance-Max 0.27Ohm
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 15.5A
Turn-Off Delay Time 80 ns
Fall Time (Typ) 26 ns
Vgs (Max) ±25V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 8ns
Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V
Current - Continuous Drain (Id) @ 25°C 15.5A Tc
Input Capacitance (Ciss) (Max) @ Vds 1900pF @ 50V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 270m Ω @ 7.75A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 25 ns
Power Dissipation 150W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 150W Tc
Number of Elements 1
JESD-30 Code R-PSSO-G2
Pin Count 4
Base Part Number STB19N
Terminal Form GULL WING
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series MDmesh? II
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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