STB18NM60ND
RoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 600V 13A D2PAK
PDF
/
Buying Options
Total Price: USD $0.74
Unit Price: USD $0.741808
≥1 USD $0.741808
≥10 USD $0.699822
≥100 USD $0.660212
≥500 USD $0.622843
≥1000 USD $0.587585
Inventory: 4915
Minimum: 1
-
+
Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No
Dimensions
Width 8.95mm
Length 10mm
Height 4.4mm
Technical
Avalanche Energy Rating (Eas) 187 mJ
DS Breakdown Voltage-Min 600V
Pulsed Drain Current-Max (IDM) 52A
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 13A
Turn-Off Delay Time 13 ns
Fall Time (Typ) 18 ns
Vgs (Max) ±25V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 600V
Rise Time 15.5 ns
Gate Charge (Qg) (Max) @ Vgs 34nC @ 10V
Current - Continuous Drain (Id) @ 25°C 13A Tc
Input Capacitance (Ciss) (Max) @ Vds 1030pF @ 50V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 290m Ω @ 6.5A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 55 ns
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 110W Tc
Number of Elements 1
JESD-30 Code R-PSSO-G2
Base Part Number STB18N
Terminal Form GULL WING
Technology MOSFET (Metal Oxide)
Resistance 290mOhm
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Series FDmesh? II
Packaging Cut Tape (CT)
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
Recommended For You
STB18NM60ND+price,STB18NM60ND+datasheet,STB18NM60ND+in stock,buy+STB18NM60ND,finder+STB18NM60ND,STB18NM60ND+tutorials,STB18NM60ND+download