Max Junction Temperature (Tj) 150°C
Drain to Source Breakdown Voltage 600V
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 12A
Turn-Off Delay Time 9.5 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Input Capacitance (Ciss) (Max) @ Vds 800pF @ 100V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 295m Ω @ 6A, 10V
Turn On Delay Time 13.5 ns
Power Dissipation-Max 90W Tc
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ