STB13N80K5
RoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 800V 12A D2PAK
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Buying Options
Total Price: USD $3.85
Unit Price: USD $3.8544
≥1 USD $3.8544
≥10 USD $3.23664
≥100 USD $2.618264
≥500 USD $2.327371
Inventory: 1050
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No
Dimensions
Width 9.35mm
Length 10.4mm
Height 4.6mm
Technical
Pulsed Drain Current-Max (IDM) 48A
Drain to Source Breakdown Voltage 800V
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 12A
Turn-Off Delay Time 42 ns
Fall Time (Typ) 16 ns
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 16 ns
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Input Capacitance (Ciss) (Max) @ Vds 870pF @ 100V
Vgs(th) (Max) @ Id 5V @ 100μA
Rds On (Max) @ Id, Vgs 450m Ω @ 6A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 16 ns
Case Connection DRAIN
Power Dissipation 190W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 190W Tc
Number of Elements 1
JESD-30 Code R-PSSO-G2
Base Part Number STB13N
Terminal Form GULL WING
Technology MOSFET (Metal Oxide)
Resistance 450mOhm
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Series SuperMESH5?
Packaging Cut Tape (CT)
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Mount Surface Mount
Supply Chain
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Factory Lead Time 26 Weeks
Alternative Model
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