STB12NM60N
RoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N ch 600V 0.005 Ohm 10A Pwr MOSFET
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Total Price: USD $2.89
Unit Price: USD $2.88895
≥1 USD $2.88895
≥10 USD $2.37025
≥100 USD $2.29615
≥500 USD $2.22205
≥1000 USD $2.14795
Inventory: 20001
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Radiation Hardening No
Technical
Avalanche Energy Rating (Eas) 200 mJ
Pulsed Drain Current-Max (IDM) 40A
Drain to Source Breakdown Voltage 600V
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 10A
Turn-Off Delay Time 60 ns
Fall Time (Typ) 10 ns
Vgs (Max) ±25V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 9ns
Gate Charge (Qg) (Max) @ Vgs 30.5nC @ 10V
Current - Continuous Drain (Id) @ 25°C 10A Tc
Input Capacitance (Ciss) (Max) @ Vds 960pF @ 50V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 410m Ω @ 5A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 15 ns
Power Dissipation 90W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 90W Tc
Number of Elements 1
JESD-30 Code R-PSSO-G2
Pin Count 3
Base Part Number STB12N
Time@Peak Reflow Temperature-Max (s) 40
Peak Reflow Temperature (Cel) 245
Terminal Form GULL WING
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Matte Tin (Sn)
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e3
Series MDmesh? II
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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