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STB12NM50N

STMicroelectronics
RoHS
RoHS RoHS compliant
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Trans MOSFET N-CH 500V 11A 3-Pin(2+Tab) D2PAK T/R
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Buying Options
Total Price: USD $2.32
Unit Price: USD $2.32275
≥1 USD $2.32275
≥10 USD $1.9057
≥100 USD $1.8468
≥500 USD $1.78695
≥1000 USD $1.7271
Inventory: 14662
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No

Technical

Nominal Vgs 3 V
Dual Supply Voltage 500V
Pulsed Drain Current-Max (IDM) 44A
Drain to Source Breakdown Voltage 500V
Gate to Source Voltage (Vgs) 25V
Threshold Voltage 3V
Continuous Drain Current (ID) 11A
Turn-Off Delay Time 60 ns
Fall Time (Typ) 14 ns
Vgs (Max) ±25V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 15ns
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Current - Continuous Drain (Id) @ 25°C 11A Tc
Input Capacitance (Ciss) (Max) @ Vds 940pF @ 50V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 380m Ω @ 5.5A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 15 ns
Power Dissipation 100W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 100W Tc
Number of Elements 1
JESD-30 Code R-PSSO-G2
Pin Count 3
Base Part Number STB12N
Time@Peak Reflow Temperature-Max (s) 30
Current Rating 11A
Peak Reflow Temperature (Cel) 245
Terminal Form GULL WING
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 500V
Subcategory FET General Purpose Power
Terminal Finish Matte Tin (Sn) - annealed
Resistance 380MOhm
ECCN Code EAR99
Termination SMD/SMT
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Series MDmesh? II
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ

Physical

Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Mount Surface Mount

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