STB11N52K3
RoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 525V 10A D2PAK
PDF
/
Buying Options
Total Price: USD $2.47
Unit Price: USD $2.4728
≥1 USD $2.4728
≥10 USD $2.0768
≥100 USD $1.679832
≥500 USD $1.493184
Inventory: 987
Minimum: 1
-
+
Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No
Dimensions
Width 10.4mm
Length 10.75mm
Height 4.6mm
Technical
Avalanche Energy Rating (Eas) 170 mJ
Pulsed Drain Current-Max (IDM) 40A
Drain to Source Breakdown Voltage 525V
Drain-source On Resistance-Max 0.51Ohm
Gate to Source Voltage (Vgs) 30V
Threshold Voltage 3.75V
Continuous Drain Current (ID) 10A
Turn-Off Delay Time 281 ns
Fall Time (Typ) 42 ns
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 18 ns
Gate Charge (Qg) (Max) @ Vgs 51nC @ 10V
Current - Continuous Drain (Id) @ 25°C 10A Tc
Input Capacitance (Ciss) (Max) @ Vds 1400pF @ 50V
Vgs(th) (Max) @ Id 4.5V @ 50μA
Rds On (Max) @ Id, Vgs 510m Ω @ 5A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 7 ns
Power Dissipation 125W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 125W Tc
Number of Elements 1
JESD-30 Code R-PSSO-G2
Pin Count 4
Base Part Number STB11N
Terminal Form GULL WING
Technology MOSFET (Metal Oxide)
Additional Feature ULTRA-LOW RESISTANCE
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series SuperMESH3?
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
Recommended For You
STB11N52K3+price,STB11N52K3+datasheet,STB11N52K3+in stock,buy+STB11N52K3,finder+STB11N52K3,STB11N52K3+tutorials,STB11N52K3+download