Drain to Source Breakdown Voltage 650V
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 10A
Turn-Off Delay Time 44 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 42nC @ 10V
Current - Continuous Drain (Id) @ 25°C 10A Tc
Input Capacitance (Ciss) (Max) @ Vds 1180pF @ 25V
Vgs(th) (Max) @ Id 4.5V @ 100μA
Rds On (Max) @ Id, Vgs 1 Ω @ 3.6A, 10V
Turn On Delay Time 14.5 ns
Element Configuration Single
Power Dissipation-Max 150W Tc
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ