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STB10N65K3

STMicroelectronics
RoHS
RoHS RoHS compliant
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 650V 0.75Ohm 10A Zener-protected
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Buying Options
Total Price: USD $0.96
Unit Price: USD $0.958126
≥1 USD $0.958126
≥10 USD $0.910219
≥100 USD $0.876005
≥500 USD $0.847
Inventory: 954
Minimum: 1
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Technical Details

Compliance

RoHS Status ROHS3 Compliant
Radiation Hardening No

Technical

Drain to Source Breakdown Voltage 650V
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 10A
Turn-Off Delay Time 44 ns
Fall Time (Typ) 35 ns
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 14ns
Gate Charge (Qg) (Max) @ Vgs 42nC @ 10V
Current - Continuous Drain (Id) @ 25°C 10A Tc
Input Capacitance (Ciss) (Max) @ Vds 1180pF @ 25V
Vgs(th) (Max) @ Id 4.5V @ 100μA
Rds On (Max) @ Id, Vgs 1 Ω @ 3.6A, 10V
FET Type N-Channel
Turn On Delay Time 14.5 ns
Element Configuration Single
Power Dissipation-Max 150W Tc
Number of Channels 1
Base Part Number STB10N6
Technology MOSFET (Metal Oxide)
ECCN Code EAR99
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series SuperMESH3?
Packaging Cut Tape (CT)
Operating Temperature -55°C~150°C TJ

Physical

Number of Pins 3
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Mount Surface Mount

Alternative Model

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