Pulsed Drain Current-Max (IDM) 400A
Drain to Source Breakdown Voltage 30V
Drain-source On Resistance-Max 0.0045Ohm
Gate to Source Voltage (Vgs) 16V
Continuous Drain Current (ID) 100A
Turn-Off Delay Time 115 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 88nC @ 5V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Input Capacitance (Ciss) (Max) @ Vds 6200pF @ 25V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Rds On (Max) @ Id, Vgs 3.2m Ω @ 50A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 300W Tc
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature LOGIC LEVEL COMPATIBLE
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ