SCTW90N65G2V
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
SILICON CARBIDE POWER MOSFET 650
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Buying Options
Total Price: USD $35.41
Unit Price: USD $35.407696
≥1 USD $35.407696
≥10 USD $33.950417
Inventory: 9
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
DS Breakdown Voltage-Min 650V
Pulsed Drain Current-Max (IDM) 220A
Drain Current-Max (Abs) (ID) 110A
Vgs (Max) +22V, -10V
Drive Voltage (Max Rds On,Min Rds On) 18V
Drain to Source Voltage (Vdss) 650V
Gate Charge (Qg) (Max) @ Vgs 157nC @ 18V
Current - Continuous Drain (Id) @ 25°C 90A Tc
Input Capacitance (Ciss) (Max) @ Vds 3300pF @ 400V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 25m Ω @ 50A, 18V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 390W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
JESD-30 Code R-PSFM-T3
Base Part Number SCTW90
Reach Compliance Code not_compliant
Terminal Position SINGLE
Technology SiCFET (Silicon Carbide)
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Operating Temperature -55°C~200°C TJ
Physical
Surface Mount NO
Package / Case TO-247-3
Mounting Type Through Hole
Supply Chain
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Alternative Model
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