SCTW40N120G2VAG
RoHS
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Package TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
AUTOMOTIVE-GRADE SILICON CARBIDE
PDF
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Buying Options
Total Price: USD $18.68
Unit Price: USD $18.6824
≥1 USD $18.6824
≥10 USD $15.48653
≥100 USD $14.51853
≥500 USD $12.389159
Inventory: 679
Minimum: 1
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Technical Details
Technical
Vgs (Max) +22V, -10V
Drive Voltage (Max Rds On,Min Rds On) 18V
Drain to Source Voltage (Vdss) 1200V
Gate Charge (Qg) (Max) @ Vgs 63nC @ 18V
Current - Continuous Drain (Id) @ 25°C 33A Tc
Input Capacitance (Ciss) (Max) @ Vds 1230pF @ 800V
Vgs(th) (Max) @ Id 5V @ 1mA
Rds On (Max) @ Id, Vgs 105m Ω @ 20A, 18V
FET Type N-Channel
Power Dissipation-Max 290W Tc
Reach Compliance Code compliant
Technology SiCFET (Silicon Carbide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Series Automotive, AEC-Q101
Operating Temperature -55°C~200°C TJ
Physical
Package / Case TO-247-3
Mounting Type Through Hole
Alternative Model
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