SCTW35N65G2VAG
RoHS
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Package TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
AUTOMOTIVE-GRADE SILICON CARBIDE
PDF
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Buying Options
Total Price: USD $18.73
Unit Price: USD $18.7314
≥1 USD $18.7314
≥10 USD $17.360459
≥100 USD $16.207979
Inventory: 8
Minimum: 1
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Technical Details
Technical
Vgs (Max) +22V, -10V
Drive Voltage (Max Rds On,Min Rds On) 18V 20V
Drain to Source Voltage (Vdss) 650V
Gate Charge (Qg) (Max) @ Vgs 73nC @ 20V
Current - Continuous Drain (Id) @ 25°C 45A Tc
Input Capacitance (Ciss) (Max) @ Vds 1370pF @ 400V
Vgs(th) (Max) @ Id 5V @ 1mA
Rds On (Max) @ Id, Vgs 67m Ω @ 20A, 20V
FET Type N-Channel
Power Dissipation-Max 240W Tc
Reach Compliance Code compliant
Technology SiCFET (Silicon Carbide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Series Automotive, AEC-Q101
Operating Temperature -55°C~200°C TJ
Physical
Package / Case TO-247-3
Mounting Type Through Hole
Alternative Model
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