SCTW100N65G2AG
RoHS
/
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
AUTOMOTIVE-GRADE SILICON CARBIDE
PDF
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Buying Options
Total Price: USD $21.71
Unit Price: USD $21.7096
≥1 USD $21.7096
≥10 USD $19.8
Inventory: 656
Minimum: 1
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Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Technical
Vgs (Max) +22V, -10V
Drive Voltage (Max Rds On,Min Rds On) 18V
Drain to Source Voltage (Vdss) 650V
Gate Charge (Qg) (Max) @ Vgs 162nC @ 18V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Input Capacitance (Ciss) (Max) @ Vds 3315pF @ 520V
Vgs(th) (Max) @ Id 5V @ 5mA
Rds On (Max) @ Id, Vgs 26m Ω @ 50A, 18V
FET Type N-Channel
Power Dissipation-Max 420W Tc
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology SiCFET (Silicon Carbide)
ECCN Code EAR99
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Series Automotive, AEC-Q101
Operating Temperature -55°C~200°C TJ
Physical
Package / Case TO-247-3
Mounting Type Through Hole
Alternative Model
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