SCTH35N65G2V-7
RoHS
/
Package TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
SILICON CARBIDE POWER MOSFET 650
PDF
/
Buying Options
Total Price: USD $13.55
Unit Price: USD $13.552
≥1 USD $13.552
≥10 USD $11.9372
≥100 USD $10.324336
≥500 USD $9.356406
Inventory: 1746
Minimum: 1
-
+
Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Technical
Vgs (Max) +22V, -10V
Drive Voltage (Max Rds On,Min Rds On) 18V 20V
Drain to Source Voltage (Vdss) 650V
Gate Charge (Qg) (Max) @ Vgs 73nC @ 20V
Current - Continuous Drain (Id) @ 25°C 45A Tc
Input Capacitance (Ciss) (Max) @ Vds 1370pF @ 400V
Vgs(th) (Max) @ Id 3.2V @ 1mA
Rds On (Max) @ Id, Vgs 67m Ω @ 20A, 20V
FET Type N-Channel
Power Dissipation-Max 208W Tc
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology SiCFET (Silicon Carbide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Operating Temperature -55°C~175°C TJ
Physical
Package / Case TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
Mounting Type Surface Mount
Supply Chain
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Alternative Model
Recommended For You
SCTH35N65G2V-7+price,SCTH35N65G2V-7+datasheet,SCTH35N65G2V-7+in stock,buy+SCTH35N65G2V-7,finder+SCTH35N65G2V-7,SCTH35N65G2V-7+tutorials,SCTH35N65G2V-7+download