Max Junction Temperature (Tj) 200°C
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 65A
Drive Voltage (Max Rds On,Min Rds On) 20V
Drain to Source Voltage (Vdss) 1200V
Gate Charge (Qg) (Max) @ Vgs 122nC @ 20V
Current - Continuous Drain (Id) @ 25°C 65A Tc
Input Capacitance (Ciss) (Max) @ Vds 1900pF @ 400V
Vgs(th) (Max) @ Id 3V @ 1mA
Rds On (Max) @ Id, Vgs 69m Ω @ 40A, 20V
Power Dissipation-Max 318W Tc
Technology SiCFET (Silicon Carbide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~200°C TJ