Drain to Source Breakdown Voltage 1.2kV
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 40A
Turn-Off Delay Time 45 ns
Drive Voltage (Max Rds On,Min Rds On) 20V
Drain to Source Voltage (Vdss) 1200V
Gate Charge (Qg) (Max) @ Vgs 105nC @ 20V
Current - Continuous Drain (Id) @ 25°C 40A Tc
Input Capacitance (Ciss) (Max) @ Vds 1700pF @ 400V
Vgs(th) (Max) @ Id 2.6V @ 1mA (Typ)
Rds On (Max) @ Id, Vgs 100m Ω @ 20A, 20V
Element Configuration Single
Power Dissipation-Max 270W Tc
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology SiCFET (Silicon Carbide)
Subcategory FET General Purpose Power
Terminal Finish Matte Tin (Sn) - annealed
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~200°C TJ