IRFP460
RoHS
/
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 500V 18.4A TO-247
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Buying Options
Total Price: USD $1.05
Unit Price: USD $1.045212
≥1 USD $1.045212
≥10 USD $0.888234
≥100 USD $0.803204
≥500 USD $0.705093
≥1000 USD $1.558
Inventory: 251
Minimum: 1
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Technical Details
Compliance
Lead Free Contains Lead
RoHS Status Non-RoHS Compliant
Radiation Hardening No
Technical
Avalanche Energy Rating (Eas) 960 mJ
Pulsed Drain Current-Max (IDM) 73.6A
Drain to Source Breakdown Voltage 500V
Drain-source On Resistance-Max 0.27Ohm
Drain Current-Max (Abs) (ID) 18.4A
Gate to Source Voltage (Vgs) 30V
JEDEC-95 Code TO-247AC
Continuous Drain Current (ID) 30A
Fall Time (Typ) 21 ns
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 21 ns
Gate Charge (Qg) (Max) @ Vgs 128nC @ 10V
Current - Continuous Drain (Id) @ 25°C 18.4A Tc
Input Capacitance (Ciss) (Max) @ Vds 2980pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 270m Ω @ 9A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 29 ns
Power Dissipation 220W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 220W Tc
Number of Elements 1
JESD-30 Code R-PSFM-T3
Pin Count 3
Base Part Number IRFP
Current Rating 20A
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 500V
Subcategory FET General Purpose Power
Terminal Finish Tin/Lead (Sn/Pb)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e0
Series PowerMESH? II
Packaging Tube
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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