IRF830
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
PowerMESH? Tube Through Hole N-Channel Mosfet Transistor 4.5A Tc 4.5A 100W 5ns
PDF
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Buying Options
Total Price: USD $0.22
Unit Price: USD $0.21565
≥1 USD $0.21565
≥10 USD $0.17765
≥100 USD $0.17195
≥500 USD $0.16625
≥1000 USD $0.16055
Inventory: 38767
Minimum: 1
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Technical Details
Compliance
Lead Free Contains Lead
RoHS Status Non-RoHS Compliant
Radiation Hardening No
Technical
Turn On Time-Max (ton) 102ns
Feedback Cap-Max (Crss) 55 pF
Avalanche Energy Rating (Eas) 290 mJ
Pulsed Drain Current-Max (IDM) 18A
Drain to Source Breakdown Voltage 500V
Gate to Source Voltage (Vgs) 20V
JEDEC-95 Code TO-220AB
Continuous Drain Current (ID) 4.5A
Fall Time (Typ) 5 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 8ns
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Current - Continuous Drain (Id) @ 25°C 4.5A Tc
Input Capacitance (Ciss) (Max) @ Vds 610pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 1.5 Ω @ 2.7A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 11.5 ns
Power Dissipation 100W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 100W Tc
Number of Elements 1
JESD-30 Code R-PSFM-T3
Pin Count 3
Base Part Number IRF8
Current Rating 4.5A
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 500V
Subcategory FET General Purpose Power
Additional Feature HIGH VOLTAGE, FAST SWITCHING
Terminal Finish Matte Tin (Sn)
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e3
Series PowerMESH?
Packaging Tube
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
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