IRF730
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
PowerMESH? II Tube Through Hole N-Channel Mosfet Transistor 5.5A Tc 55A 100W 9ns
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Buying Options
Total Price: USD $1.75
Unit Price: USD $1.7512
≥1 USD $1.7512
≥10 USD $1.6632
≥100 USD $1.5752
≥500 USD $1.4872
≥1000 USD $1.452
Inventory: 630
Minimum: 1
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Technical Details
Compliance
Lead Free Contains Lead
RoHS Status ROHS3 Compliant
Radiation Hardening No
Technical
Feedback Cap-Max (Crss) 65 pF
Drain to Source Breakdown Voltage 400V
Drain-source On Resistance-Max 1Ohm
Gate to Source Voltage (Vgs) 20V
JEDEC-95 Code TO-220AB
Continuous Drain Current (ID) 5.5A
Turn-Off Delay Time 15 ns
Fall Time (Typ) 9 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 11ns
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
Current - Continuous Drain (Id) @ 25°C 5.5A Tc
Input Capacitance (Ciss) (Max) @ Vds 530pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 1 Ω @ 3A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Power Dissipation 100W
Operating Mode ENHANCEMENT MODE
Current 55A
Element Configuration Single
Power Dissipation-Max 100W Tc
Voltage 400V
Number of Elements 1
Pin Count 3
Base Part Number IRF7
Current Rating 5.5A
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 400V
Subcategory FET General Purpose Power
Additional Feature HIGH VOLTAGE, FAST SWITCHING
Terminal Finish Matte Tin (Sn)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e3
Series PowerMESH? II
Packaging Tube
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
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