IRF640FP
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3 Full Pack
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 200V 18A TO-220FP
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Buying Options
Total Price: USD $0.27
Unit Price: USD $0.266
≥1 USD $0.266
≥10 USD $0.2185
≥100 USD $0.21185
≥500 USD $0.2052
≥1000 USD $0.19855
Inventory: 1154
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Technical
Avalanche Energy Rating (Eas) 280 mJ
Pulsed Drain Current-Max (IDM) 72A
Drain to Source Breakdown Voltage 200V
Gate to Source Voltage (Vgs) 20V
JEDEC-95 Code TO-220AB
Continuous Drain Current (ID) 18A
Fall Time (Typ) 25 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 27ns
Gate Charge (Qg) (Max) @ Vgs 72nC @ 10V
Current - Continuous Drain (Id) @ 25°C 18A Tc
Input Capacitance (Ciss) (Max) @ Vds 1560pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 180m Ω @ 9A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection ISOLATED
Power Dissipation 40W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 40W Tc
Number of Elements 1
Qualification Status Not Qualified
Pin Count 3
Base Part Number IRF6
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Current Rating 18A
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 200V
Subcategory FET General Purpose Power
Terminal Finish Matte Tin (Sn)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e3
Series MESH OVERLAY?
Packaging Tube
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-220-3 Full Pack
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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